AMAT Applied Materials 0150-30266双射频滤波器模块
1.产 品 资 料 介 绍：
- 双路独立滤波设计：集成两路完全独立的射频滤波通道，支持 13.56MHz（主流刻蚀 / 沉积射频频段）与 27.12MHz（高频辅助射频频段）双频段适配，每路通道可单独设定滤波参数。采用 LC ladder（梯形）滤波拓扑结构，通带插入损耗≤0.5dB（确保信号衰减最小），阻带抑制（针对 10kHz-1GHz 杂波）≥45dB，可有效滤除射频电源与外界环境产生的谐波、噪声信号，保障两路射频信号互不串扰。
- 高功率承载能力：单路通道额定功率承载≥500W（峰值功率≥1500W），采用无氧铜（OFC）传输导体与陶瓷介质电容，耐高温特性优异（工作温度范围 - 20~85℃），可耐受双射频系统长期高功率运行产生的热量，避免因功率过载导致滤波性能衰减，适配刻蚀工艺中源极 300W、偏压 200W 的典型双射频功率配置。
- 精准阻抗匹配：每路通道输入 / 输出阻抗严格匹配 50Ω（射频系统标准阻抗），阻抗驻波比（VSWR）≤1.2:1（通带内），确保滤波后射频信号无反射损耗，与射频发生器（如 AMAT 专用射频源）、匹配器（如 0190-16177）形成高效信号链路，避免因阻抗失配导致的功率浪费与信号畸变。
AMAT Applied Materials 0150-30266双射频滤波器模块 英文资料：
1、 Core positioning and system of the product
The 0150-30266 dual RF filter module is a key purification component in the semiconductor equipment RF signal processing system of Applied Materials Company (AMAT), belonging to the "RF interference suppression and signal optimization" product line. In core processes such as wafer etching and PECVD that rely on dual RF sources (such as source RF and bias RF), RF signals are susceptible to electromagnetic interference (EMI) and cross-talk, leading to plasma instability. As a "signal purifier", this module is specifically designed to adapt to AMAT Centura and Endura series dual RF process equipment. By filtering two independent RF signals in a targeted manner, it suppresses clutter interference and ensures accurate transmission of RF energy to the process chamber. It is the core unit that ensures stable operation of the dual RF system and improves process consistency.
2、 Analysis of core functions and technical characteristics
Considering the strict requirements for signal purity (clutter suppression ratio ≥ 40dB) and power carrying capacity of the semiconductor dual RF system, the core characteristics of this module can be accurately disassembled into the following points:
Dual independent filtering design: integrates two completely independent RF filtering channels, supporting dual band adaptation of 13.56MHz (mainstream etching/deposition RF frequency band) and 27.12MHz (high-frequency auxiliary RF frequency band), and each channel can be individually set with filtering parameters. Adopting LC ladder filtering topology, the passband insertion loss is ≤ 0.5dB (ensuring minimal signal attenuation), and the stopband suppression (for 10kHz-1GHz clutter) is ≥ 45dB, which can effectively filter out harmonic and noise signals generated by the RF power supply and the external environment, ensuring that the two RF signals do not interfere with each other.
High power carrying capacity: The rated power carrying capacity of a single channel is ≥ 500W (peak power ≥ 1500W), using oxygen free copper (OFC) transmission conductors and ceramic dielectric capacitors, with excellent high temperature resistance (working temperature range -20~85 ℃), and can withstand the heat generated by long-term high-power operation of dual RF systems, avoiding filtering performance degradation caused by power overload. It is suitable for typical dual RF power configurations with a source of 300W and a bias of 200W in etching processes.
Accurate impedance matching: Each channel's input/output impedance is strictly matched to 50 Ω (standard impedance of RF system), and the impedance standing wave ratio (VSWR) is ≤ 1.2:1 (within the passband), ensuring that the filtered RF signal has no reflection loss. It forms an efficient signal link with the RF generator (such as AMAT dedicated RF source) and matching device (such as 0190-16177) to avoid power waste and signal distortion caused by impedance mismatch.
AMAT Applied Materials 0150-30266双射频滤波器模块 产品展示
产品视频
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| 6ES5312-5AA31 | CACR-PR01KA4BU | 6ES5187-5UA11 |
| 6ES5311-3KA11 | 6SC6030-2AA02 | 6DD2920-0WB00 |
| 6ES5308-3UA12 | 6SC9711-0AB0 | 6ES5155-3UA11 |
| 6ES5306-7LA11 | CACR-IR151515F | 6DD2920-0BF0 |
The content is from Ruichang Mingsheng Automation Equipment Co., LTD
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