AMAT Applied Materials 0100-00010离子量规模块

1.产 品 资 料 介 绍：

AMAT Applied Materials 0100-00010 离子量规模块

核心功能

• 等离子体参数测量：精确检测等离子体中的离子浓度、离子能量分布或离子电流密度
• 实时数据输出：将测量结果转换为标准电信号或数字数据，支持工艺闭环控制
• 宽量程监测：可适应不同工艺阶段的等离子体密度变化（通常覆盖 10⁸-10¹² ions/cm³）
• 抗干扰设计：在强电磁和射频环境下保持测量稳定性
• 自检与校准：内置诊断功能，支持定期校准以维持测量精度

技术特点

• 测量原理：可能采用朗缪尔探针（Langmuir Probe）或等离子体吸收光谱技术
• 测量精度：±5% 以内（满量程），满足精密工艺要求
• 响应时间：毫秒级，可捕捉等离子体动态变化
• 输出信号：0-10V 模拟信号或数字通信（如 RS-485、Ethernet）
• 接口形式：适配设备真空腔体的标准法兰（如 CF 或 KF 接口）
• 工作环境：-10℃~60℃，适应设备内部复杂环境

典型应用

• 刻蚀设备：监控等离子体密度，确保刻蚀速率与均匀性
• 等离子体增强沉积（PECVD）：控制等离子体状态以优化薄膜性能
• 离子注入机：监测离子束流强度与分布
• 等离子体清洗设备：确保清洗效果的一致性
• 干法刻蚀系统：实时调整工艺参数以补偿等离子体波动

AMAT Applied Materials 0100-00010离子量规模块 英文资料：

AMAT Applied Materials 0100-00010 Ion Gauge Module

AMAT 0100-00010 is a high-precision ion gauge module designed specifically for semiconductor manufacturing equipment. It is used to monitor and quantify the plasma ion density or ion current intensity inside the process chamber, ensuring the stability and consistency of plasma processes such as etching and deposition.

core functionality

Plasma parameter measurement: precise detection of ion concentration, ion energy distribution, or ion current density in plasma

Real time data output: convert measurement results into standard electrical signals or digital data, supporting process closed-loop control

Wide range monitoring: can adapt to plasma density changes in different process stages (usually covering 10 ⁸ -10 ¹² ions/cm ³)

Anti interference design: maintain measurement stability in strong electromagnetic and radio frequency environments

Self check and calibration: Built in diagnostic function, supports regular calibration to maintain measurement accuracy

Technical Features

Measurement principle: Langmuir probe or plasma absorption spectroscopy technology may be used

Measurement accuracy: within ± 5% (full range), meeting precision process requirements

Response time: millisecond level, capable of capturing dynamic changes in plasma

Output signal: 0-10V analog signal or digital communication (such as RS-485, Ethernet)

Interface form: Standard flange adapted to the vacuum chamber of the equipment (such as CF or KF interface)

Working environment: -10 ℃~60 ℃, suitable for complex internal environments of equipment

Typical Applications

Etching equipment: Monitor plasma density to ensure etching rate and uniformity

Plasma Enhanced Deposition (PECVD): Controlling Plasma State to Optimize Thin Film Properties

Ion implantation machine: monitoring ion beam intensity and distribution

Plasma cleaning equipment: ensuring consistency of cleaning effect

Dry etching system: real-time adjustment of process parameters to compensate for plasma fluctuations

AMAT Applied Materials  0100-00010离子量规模块 产品展示      

 产品视频

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

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