AMAT Applied Materials 0190-11570射频匹配器
1.产 品 资 料 介 绍:
- 等离子体刻蚀:适配硅片、化合物半导体的干法刻蚀工艺,保障刻蚀速率与图形精度的均匀性
- 等离子体增强化学气相沉积(PECVD):用于薄膜沉积过程的功率稳定控制,提升膜厚一致性
- 等离子体清洗:在晶圆键合前处理中提供稳定等离子体源,确保表面清洁效果
- 配套射频电源:兼容 AMAT 自家 1500W 级射频电源(如 0190 系列电源),也可适配安捷伦、康姆艾德等品牌同功率等级电源
- 主机设备适配:广泛应用于 AMAT Centura 刻蚀系统、Endura 沉积平台等主力半导体设备
- 协同组件:与射频功率计、反应腔压力控制器联动,形成闭环功率控制体系
AMAT Applied Materials 0190-11570射频匹配器 英文资料:
1、 Product core positioning
AMAT 0190-11570 is an automatic RF matching device specially designed by Applied Materials for semiconductor plasma processes, and belongs to the core regulating component of RF power transmission systems. Its core function is to dynamically match the impedance difference between the RF power supply and the plasma load. By adjusting the internal adjustable capacitor in real time, the reflected power is minimized to ensure efficient and stable transmission of RF energy to the etching or deposition reaction chamber. It is a key equipment to ensure process uniformity and equipment safety.
Compared with traditional manual matchers, this model adopts a high-speed automatic matching algorithm, which can quickly respond to drastic changes in load impedance (such as plasma ignition stage), significantly improving process stability and production efficiency.
2、 Key technical parameters (derived from industry standards and similar products)
Based on the AMAT RF equipment technical specifications and the general parameters of the 13.56MHz frequency band matching device, the core specifications of this model are speculated as follows:
Parameter category
Specification Description
RF core characteristics
Operating frequency 13.56MHz ± 50ppm, power range 50-1500W, target impedance 50 Ω
Matching performance
Matching time<3s (preset point<1s), standing wave ratio<1.2, maximum reflected power<3W or 1% input power
Impedance matching range
Resistance component 0.5-35 Ω, reactance component -112-32 Ω (covering the typical impedance range of semiconductor plasma)
Physical and Environmental Specifications
Size approximately 370 × 264 × 130mm, weight<9kg, working temperature 0-50 ℃, humidity<85%, no condensation
Power supply and interface
220VAC ± 10% power supply, working current 0.5A; RF input is N-type female connector, control interface includes DB15 communication port
Cooling and Certification
Forced air cooling for heat dissipation, in compliance with CE, UL, and semiconductor equipment clean room usage standards
3、 Application scenarios and adaptation systems
1. Core application areas
As a power regulator for plasma technology, this matching device is mainly used in key processes of semiconductor manufacturing:
Plasma etching: a dry etching process suitable for silicon wafers and compound semiconductors, ensuring the uniformity of etching rate and pattern accuracy
Plasma enhanced chemical vapor deposition (PECVD): used for power stability control in thin film deposition process, improving film thickness consistency
Plasma cleaning: providing a stable plasma source during wafer bonding pre-processing to ensure surface cleaning effectiveness
2. Adapt devices and systems
Supporting RF power supply: Compatible with AMAT's own 1500W level RF power supply (such as the 0190 series power supply), and can also be adapted to power supplies of the same power level from brands such as Agilent and Cammed
Host device adaptation: widely used in major semiconductor equipment such as AMAT Centura etching system and Endura deposition platform
Collaborative components: linked with RF power meter and reaction chamber pressure controller to form a closed-loop power control system
AMAT Applied Materials 0190-11570射频匹配器产品展示
产品视频
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NI CPCI-3840 单板计算机
Hirschmann MM20-Z6Z6Z6Z6SBH 工业以太网交换机
Schroff MPS022 13190020 电源模块
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The content is from Ruichang Mingsheng Automation Equipment Co., LTD
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