AMAT Applied Materials 0090-01419射频发电机
1.产 品 资 料 介 绍：
- 宽域功率覆盖与精准调节：支持射频功率输出范围（推测为 100W-3000W），可根据不同工艺需求（如硅片蚀刻、金属薄膜沉积）实现 0.1W 级精度调节，功率输出误差≤±0.5%，确保等离子体密度稳定控制在 10¹⁰-10¹² cm⁻³ 范围，避免因功率波动导致的晶圆刻蚀深度偏差或薄膜厚度不均，保障工艺良率。
- 多频段兼容适配：覆盖半导体工艺常用射频频段（如 13.56MHz、27.12MHz、40.68MHz），可通过软件一键切换频段，无需更换硬件模块，适配不同工艺对射频频率的差异化需求 —— 例如 13.56MHz 频段适用于大面积均匀蚀刻，40.68MHz 频段适用于高精度细线条刻蚀，提升设备工艺兼容性。
- 低谐波失真与高功率因数：采用先进的射频振荡与功率放大电路，谐波失真度≤-40dBc（相对于基波），避免高次谐波干扰等离子体生成过程，确保等离子体纯度；同时功率因数≥0.95，有效降低电网能耗，减少能源浪费，符合半导体行业绿色生产标准，单台设备年均能耗较传统射频发电机降低 15% 以上。
- 实时闭环功率控制：内置高精度功率传感器（采样频率≥10kHz），可实时采集负载端（如蚀刻腔室）的实际功率，通过 PID 闭环控制算法在 100μs 内完成功率补偿，当负载阻抗因工艺变化（如等离子体浓度波动）发生偏移时，仍能保持输出功率稳定，功率波动幅度≤±0.3%，避免工艺中断或晶圆报废。
AMAT Applied Materials 0090-01419射频发电机 英文资料：
1、 High precision power output: meets the stringent requirements of semiconductor processes
As the "energy core" of semiconductor equipment, the 0090-01419 RF generator provides reliable RF energy for key processes such as etching and deposition with stable and precise power supply as its core, ensuring plasma control accuracy
Wide range power coverage and precise adjustment: Supports RF power output range (estimated to be 100W-3000W), can achieve 0.1W level precision adjustment according to different process requirements (such as silicon wafer etching, metal film deposition), power output error ≤ ± 0.5%, ensuring stable control of plasma density within the range of 10 ¹⁰ -10 ¹² cm ⁻ ³, avoiding wafer etching depth deviation or uneven film thickness caused by power fluctuations, and ensuring process yield.
Multi band compatibility adaptation: Covering commonly used RF frequency bands in semiconductor processes (such as 13.56MHz, 27.12MHz, 40.68MHz), the frequency band can be switched with one click through software without the need to ｒｅｐｌａｃｅ hardware modules, adapting to the differentiated RF frequency requirements of different processes - for example, the 13.56MHz frequency band is suitable for large-area uniform etching, and the 40.68MHz frequency band is suitable for high-precision fine wire etching, improving equipment process compatibility.
Low harmonic distortion and high power factor: Advanced RF oscillation and power amplification circuits are used, with harmonic distortion ≤ -40dBc (relative to the fundamental wave), to avoid high-order harmonic interference in the plasma generation process and ensure plasma purity; At the same time, the power factor is ≥ 0.95, effectively reducing power grid energy consumption and energy waste, meeting the green production standards of the semiconductor industry. The average annual energy consumption of a single device is reduced by more than 15% compared to traditional RF generators.
2、 Intelligent regulation and closed-loop feedback: ensuring process stability
Relying on AMAT's exclusive RF control technology, this generator has powerful intelligent regulation and real-time feedback capabilities, providing dual guarantees for process stability:
Real time closed-loop power control: Equipped with a high-precision power sensor (sampling frequency ≥ 10kHz), it can collect the actual power of the load end (such as the etching chamber) in real time. The PID closed-loop control algorithm completes power compensation within 100 μ s. When the load impedance deviates due to process changes (such as plasma concentration fluctuations), it can still maintain stable output power with a power fluctuation amplitude of ≤± 0.3%, avoiding process interruptions or wafer scrap.
AMAT Applied Materials 0090-01419射频发电机 产品展示
产品视频
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| 6RA2116-6DV60-6DB0-ZA07 | 531X112PSAAMG1 | F31X134EPRBDG1 |
| -6GC11 | 193X803BEG03 | F31X134EPRBAG1 |
| 6ES5998-8MB22 | 531X116SHAAAG1 | 531X308PCSAEG3 |
| 6ES5998-8MA12 | 531X102CCHAEM1 | 740-689986-002 |
| 6ES5998-5SK11 | 26-147415-00 | 073-404369-00 |
| 6ES5998-4ET31 | 531X111PSHAWG2 | 710-652697-00 |
| 6ES5998-3ES52 | 531X111PSHASG1 | 92-005422-OX |
The content is from Ruichang Mingsheng Automation Equipment Co., LTD
Contact: +86 15270269218
