AMAT Applied Materials  0190-34624气体面板组件

1.产 品 资 料 介 绍：

AMAT Applied Materials  0190-34624气体面板组件 英文资料：

1、 High precision gas distribution: supporting precise control of process parameters

As the "distribution center" for process gases in semiconductor equipment, the 0190-34624 gas panel component is centered around precise control of multiple pathways, achieving stable transportation and ratio adjustment of different process gases, ensuring consistency in etching, deposition, and other processes

Multi pathway independent regulatory ability

Integrate 8-12 independent gas channels (depending on configuration), which can simultaneously adapt to the transportation needs of inert gases (such as Ar, N ₂), reactive gases (such as O ₂, Cl ₂), and specialty gases (such as WF ₆, SiH ₄). The channels are designed with 316L stainless steel material isolation chambers, with an isolation degree of ≥ 10 ⁻⁹ Pa · m ³/s, completely avoiding gas cross contamination - for example, 1-2 channels transport etching main gas, 3-4 channels transport dilution gas, and 5 channels transport cleaning gas. Each channel operates independently without interference.

Micron level flow regulation accuracy

Each channel is equipped with an imported mass flow controller (MFC), with a flow regulation range of 0-500 sccm, an accuracy of ± 1% F.S., a repeatability of ≤± 0.2% F.S., and support for 0.1 sccm level fine-tuning; Adopting PID closed-loop control algorithm, the flow response time is ≤ 500ms. When the process demand changes (such as switching from 200 sccm to 350 sccm), it can stabilize to the target flow rate within 1 second, with a fluctuation amplitude of ≤± 0.5 sccm, ensuring uniform gas concentration distribution on the wafer surface and controlling the etching rate deviation within ± 2%.

Adjustable gas diffusion structure

Drawing on the design concept of layered diffusion plates, a double-layer concentric annular diffusion component is integrated at the outlet end, including a fixed lower layer plate and a rotatable upper layer plate. The lower layer plate is equipped with three layers of annular distributed diffusion holes (with a diameter of 0.5mm and a spacing of 2mm), and the corresponding position of the upper layer plate is equipped with matching diffusion holes. By rotating the upper layer plate to change the coincidence of the hole positions, the gas diffusion angle can be adjusted from 30 ° to 120 °, and the exhaust density gradient can be continuously adjusted from 0-100%. It is suitable for the process requirements of wafers of different sizes (8 inches/12 inches), avoiding the uniformity deviation within the wafer surface caused by edge effects.

AMAT Applied Materials 0190-34624气体面板组件 产品展示      

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

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