AMAT Applied Materials 0041-78374射频匹配组件

1.产 品 资 料 介 绍：

AMAT Applied Materials 0041-78374射频匹配组件 英文资料：

1、 Product core positioning

AMAT 0041-78374 RF matching component is a high-precision RF power regulation unit specially developed by Applied Materials for semiconductor plasma process equipment. It belongs to the "core adaptation center" of RF power transmission systems. Its core function is to compensate for impedance mismatch between RF power supply and plasma load in real time. By dynamically adjusting internal adjustable capacitors, inductors and other components, the reflected power is controlled at an extremely low level, ensuring efficient and stable transmission of RF energy to the etching or deposition reaction chamber. It is a key component to ensure plasma density uniformity, process stability and equipment safety in semiconductor processes (such as 14nm and below processes).

Compared to ordinary RF matching devices, this component adopts a modular integrated design that integrates high-precision impedance detection circuits and high-speed response adjustment algorithms. It can quickly respond to severe fluctuations in plasma loads (such as ignition and process parameter switching stages), and has stronger resistance to electromagnetic interference and corrosion in the process environment. It is suitable for Class 100 cleanliness in semiconductor cleanrooms and long-term continuous production needs.

2、 Core structure and technical parameters (derived based on industry standards and similar products)

Based on the AMAT RF system technical specifications, the requirements for RF matching in semiconductor plasma processes, and the application scenarios of this component, the core specifications are speculated as follows:

Parameter category

Specification Description

RF core characteristics

Operating frequency 13.56MHz ± 10ppm (mainstream frequency band in semiconductor technology), suitable power range 100-2000W, target impedance 50 Ω

Matching performance

Matching response time ＜ 2s (＜ 0.8s during load mutation), standing wave ratio (VSWR) ≤ 1.15, maximum reflected power ＜ 2W or 0.5% input power

Impedance matching range

Resistance component 0.3-40 Ω, reactance component -120-40 Ω (covering typical impedance range of plasma process)

Structure and Material

Adopting modular design, including adjustable vacuum capacitors (ceramic dielectric) and high-frequency inductors (made of oxygen free copper); The shell is anodized aluminum alloy with a protection level of IP54

Cooling and power supply

Forced air cooling (wind speed ≥ 2m/s), working temperature 5-55 ℃; Supply voltage 220VAC ± 10%, working current ≤ 1.2A

Control and Interface

Supports dual communication interfaces of RS-485 and Ethernet, and can be connected to device PLC systems; Equipped with impedance detection and fault alarm output ports

Certification and Compatibility

Compliant with CE, UL safety standards and SEMI S2/S8 semiconductor equipment specifications, compatible with AMAT 0190 series RF power supply

 AMAT Applied Materials 0041-78374射频匹配组件 产品展示      

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

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